$A$ semiconductor has equal electron and hole concentration of $6 \times 10^8 \, m^{-3}$. On doping with a certain impurity,the electron concentration increases to $9 \times 10^{12} \, m^{-3}$. The new hole concentration is:

  • A
    $2 \times 10^4 \, m^{-3}$
  • B
    $2 \times 10^2 \, m^{-3}$
  • C
    $4 \times 10^4 \, m^{-3}$
  • D
    $4 \times 10^2 \, m^{-3}$

Explore More

Similar Questions

Pure $Si$ at $500\, K$ has equal number of electron $(n_e)$ and hole $(n_h)$ concentrations of $1.5 \times 10^{16} \, m^{-3}$. Doping by indium increases $n_h$ to $4.5 \times 10^{22} \, m^{-3}$. The doped semiconductor is of:

The impurity atoms which are mixed with pure silicon to make a $P$-type semiconductor are those of:

The rate of recombination or generation of charge carriers in a semiconductor is governed by the law$(s)$ of:

If the ratio of the number density of electrons to the number density of holes in a semiconductor is $7/5$ and the ratio of their currents is $7/4$,what is the ratio of their drift velocities?

In $n$-type semiconductor,electrons are majority charge carriers,but it does not show any negative charge. The reason is:

Vedclass Products

For Students

Vedclass Test Series

Mock tests in real JEE/NEET style with performance analysis. 5-day free trial.

Start Free Trial
For Teachers

Exam Paper Generator

Generate Set A/B/C/D exam papers from 7.5L+ questions in 2 minutes. 3 chapters free.

Try Free
For Institutes

Online Exam Module

Live online exams with unlimited students, 360° analytics & white-label branding.

See Demo